Low temperature (250 °C) photo-oxidation of silicon initiated by aXe2*excimer lamp operating at a wavelength of 172 nm has been investigated. The induced reaction rate of 0.1 nm/min is 90 times greater than thermal oxidation at 612 °C and more than three times greater than that previously obtained at 350 °C using a low pressure mercury lamp. It was found to be strongly dependent upon oxygen pressure with the highest rates being achievable below 10 mbar. Ellipsometry, Fourier transform infrared spectroscopy, capacitance–voltage, and current–voltage measurements have been employed to characterize the oxide films and designate them as high quality. ©1997 American Institute of Physics.