Influence of oxygen plasma treatments on the structural properties ofc-Si
作者:
N. H. Nickel,
I. Sieber,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 72,
issue 21
页码: 2683-2685
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.121098
出版商: AIP
数据来源: AIP
摘要:
The effects of hydrogen and oxygen plasma treatments on the structural properties ofn-typec-Si were examined. Specimens were exposed to either an oxygen or a hydrogen electron-cyclotron-resonance plasma in a temperature range of 240–385 °C. Hydrogenations performed at low temperatures (<300 °C) introduced platelets. On the other hand, oxygen plasma treatments did not result in the formation of platelets. Analysis of O and H concentration depth profiles, measured by secondary-ion-mass spectrometry (SIMS), reveal that O and H migrate with a similar diffusion coefficient ofDeff≈1012 cm2 s−1.Moreover, the O concentration exceeds the H concentration by roughly a factor of 2.5. This suggests that one H atom and 2–3 O atoms migrate as a cluster. Furthermore, evidence of deep traps for H and O was found from the SIMS depth profiles. ©1998 American Institute of Physics.
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