Observation of step configuration conversion on single‐domain Si(001) 1×2 surface by scanning tunneling microscope
作者:
J. M. Zhou,
N. Lin,
L. W. Guo,
M. H. Zhang,
Q. Huang,
N. Cue,
T. Chen,
期刊:
Applied Physics Letters
(AIP Available online 1996)
卷期:
Volume 69,
issue 22
页码: 3336-3338
ISSN:0003-6951
年代: 1996
DOI:10.1063/1.117298
出版商: AIP
数据来源: AIP
摘要:
We have observed a conversion of step configuration of 3.5° miscut Si(001) surface after depositing several monolayers of Ge by using a scanning tunneling microscope. For a 3.5° miscut Si(001) surface, terraces are spaced by double‐atom height steps and all dimer rows, either on the upper terrace or on the lower terrace of a step, are normal to the step edge, defined as single‐domain (1×2) surface. After depositing 2 ML of Ge, the surface is still single domain, but dimer rows have changed their direction, running parallel to the step edge and single domain (2×1) appeared. The reason for such conversion is attributed to the strain that existed on the epilayer of Ge. ©1996 American Institute of Physics.
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