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Dislocation curvature by kink migration in a non-uniform stress field application to dislocation loops in silicon

 

作者: B. Pichaud,   F. Minari,  

 

期刊: Philosophical Magazine Letters  （Taylor Available online 1988）
卷期: Volume 57, issue 6  

页码: 299-303

 

ISSN:0950-0839

 

年代: 1988

 

DOI:10.1080/09500838808214717

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

The radius of curvature of dislocations in the thermally activated regime of glide, and in a non-uniform stress field, is derived from two characteristic times related to kink velocity. The result is compared to experimental values of the radius of curvature at the corner of stress-induced dislocation loops in silicon.

 

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