NiSi2precipitation in nickel‐implanted silicon films
作者:
R. C. Cammarata,
C. V. Thompson,
K. N. Tu,
期刊:
Applied Physics Letters
(AIP Available online 1987)
卷期:
Volume 51,
issue 14
页码: 1106-1108
ISSN:0003-6951
年代: 1987
DOI:10.1063/1.99003
出版商: AIP
数据来源: AIP
摘要:
We report on the formation of nickel silicide in nickel‐implanted amorphous silicon thin films. We have found that during annealing, precipitates of NiSi2form in the interior of the film. This is in contrast with results for interfacial reactions between nickel films and silicon, where the first phases to appear are Ni2Si and NiSi on amorphous silicon, and Ni2Si on crystalline silicon. We suggest that these results reflect differences in surface energies and their effects on silicide nucleation.
点击下载:
PDF
(390KB)
返 回