1.3 &mgr;m strain-compensated InAsP/InGaP electroabsorption modulator structure grown by atmospheric pressure metal–organic vapor epitaxy
作者:
A. Ougazzaden,
F. Devaux,
E. V. K. Rao,
L. Silvestre,
G. Patriarche,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 1
页码: 96-98
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119319
出版商: AIP
数据来源: AIP
摘要:
High quality 15-period strain-compensated InAsP/InGaP electroabsorption (EA) modulator structures have been grown by atmospheric pressure metal–organic vapor epitaxy. The incorporation of large compressive strain (∼1.7&percent;) in the InAsP wells and tensile strain (∼−1.8&percent;) in the InGaP barriers necessitated the growth of a few InP monolayers between the wells and barriers. The high structural quality of such samples has been demonstrated by (cross-sectional transmission electron microscopy analysis to be free of misfit dislocations and thickness undulations. The detection of a sharp and abrupt room-temperature exciton peak both in the photoconductivity and photoluminescence measurements further confirmed their excellent optical quality. 100 &mgr;m cavity length EA modulators fabricated in these structures exhibited excellent performances namely, an extinction ratio higher than 20 dB for 2.5 V drive voltage, a 3 dB bandwidth over 20 GHz, and low coupling losses to fiber (less than 2.5 dB per facet). ©1997 American Institute of Physics.
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