首页   按字顺浏览 期刊浏览 卷期浏览 Two‐dimensional effects in two‐terminaln+‐p‐n+devices fabri...
Two‐dimensional effects in two‐terminaln+‐p‐n+devices fabricated by planar technology

 

作者: S. C. Jain,   Z. J. Staszak,   A. Musallam,   R. H. Mattson,  

 

期刊: Journal of Applied Physics  （AIP Available online 1988）
卷期: Volume 63, issue 1  

页码: 231-233

 

ISSN:0021-8979

 

年代: 1988

 

DOI:10.1063/1.340497

 

出版商: AIP

 

数据来源: AIP

 

摘要:

I‐Vcharacteristics of two‐terminaln+‐p‐n+devices fabricated by planar technology are studied theoretically and experimentally. A quasi‐two‐dimensional (2D) model is used to interpret the experimental results. The results suggest that the 2D effects are a very likely candidate to explain the difference in our results and those obtained with the conventional 1D BARRIT diodes.

 

点击下载:  PDF (327KB)



返 回