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Current‐voltage characteristics of Na/p‐GaP(110) Schottky diodes

 

作者: M. von der Emde,   D. R. T. Zahn,   Ch. Schultz,   D. A. Evans,   K. Horn,  

 

期刊: Journal of Applied Physics  （AIP Available online 1992）
卷期: Volume 72, issue 9  

页码: 4486-4487

 

ISSN:0021-8979

 

年代: 1992

 

DOI:10.1063/1.352183

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The Schottky barrier of Na deposited onto ultrahigh vacuum cleavedp‐type GaP has been determined byinsitucurrent‐voltage measurements. The Schottky barrier height of 1.10 eV for this low work function metal contacts is consistent with a general weak metal dependence for barrier formation on GaP(110).

 

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