Picosecond laser sputtering of sapphire at 266 nm
作者:
A. C. Tam,
J. L. Brand,
D. C. Cheng,
W. Zapka,
期刊:
Applied Physics Letters
(AIP Available online 1989)
卷期:
Volume 55,
issue 20
页码: 2045-2047
ISSN:0003-6951
年代: 1989
DOI:10.1063/1.102100
出版商: AIP
数据来源: AIP
摘要:
We observe that 266 nm laser pulses of 30 ps duration and fluence near 10 J/cm2causes reproducible surface sputtering and etching of crystalline sapphire in air. The etching rate for the initial ten pulses is relatively slow, 0.04 &mgr;m/pulse, producing a smooth surface of the etched area and a broad‐angle plume emission. After some 20 pulses, the etching rate is dramatically faster, 0.5 &mgr;m/pulse, producing a rough etched surface and a plume composed of broad‐angle emission as well as a narrow perpendicular jet emission. Micron‐sized depressions can be made on the sapphire with no visible damage or cracking to the surroundings.
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