Optical birefringence of ultrathin AlxGa1−xAs‐GaAs multilayer heterostructures
作者:
J. P. van der Ziel,
A. C. Gossard,
期刊:
Journal of Applied Physics
(AIP Available online 1978)
卷期:
Volume 49,
issue 5
页码: 2919-2921
ISSN:0021-8979
年代: 1978
DOI:10.1063/1.325178
出版商: AIP
数据来源: AIP
摘要:
The measured birefringence of ultrathin AlxGa1−xAs‐GaAs multilayers grown by molecular beam epitaxy is shown to result from the difference in the effective refractive indices for transverse electric and magnetic polarizations and from the quantum‐size effect of the one‐dimensionally confined carriers in the GaAs potential wells.
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