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Scanning tunneling microscopy/scanning tunneling spectroscopy simulation of Si(111)√3×√3‐B surface

 

作者: Masaru Tsukada,   Katsuyoshi Kobayashi,   Nobuyuki Shima,   Nobuyuki Isshiki,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1991）
卷期: Volume 9, issue 2  

页码: 492-494

 

ISSN:1071-1023

 

年代: 1991

 

DOI:10.1116/1.585553

 

出版商: American Vacuum Society

 

关键词: SILICON;SURFACE STRUCTURE;SIMULATION;SCANNING TUNNELING MICROSCOPY;SURFACE STATES;AB INITIO CALCULATIONS;Si;NEGATIVE DIFFERENTIAL RESISTANCE

 

数据来源: AIP

 

摘要:

Mechanism of the negative differential resistance (NDR) observed in the scanning tunneling spectroscopy of the Si(111)√3×√3‐B surface is discussed based on the simulation with the first‐principles electronic states calculation. The NDR is reproduced by the W10[111] tip model, but not by the W14[110] and Pt10[111] models. The presence of the localized dangling bond state nearEFfor the surface in conjunction with a single tunnel active orbital at the tip apex causes the NDR.

 

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