Atomic layer epitaxial predeposition for GaAs growth on Si
作者:
Utpal Das,
S. Dhar,
Mousumi Mazumdar,
期刊:
Applied Physics Letters
(AIP Available online 1996)
卷期:
Volume 68,
issue 25
页码: 3573-3575
ISSN:0003-6951
年代: 1996
DOI:10.1063/1.116641
出版商: AIP
数据来源: AIP
摘要:
We report a two‐step growth process, using an atomic layer epitaxially grown GaAs predeposition layer for the growth of GaAs/Si layers by metalorganic vapor phase epitaxy technique. Photoluminescence and deep‐level transient spectroscopy techniques are used to show that the quality of the grown material is comparable to that grown by a much complicated procedure involving strained layer superlattice buffers introduced between the active GaAs layer and the Si substrate. ©1996 American Institute of Physics.
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