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Non-monotonic depth distribution of secondary defects in ion implanted layers of silicon

 

作者: N.N. Gerasimenko,   A.P. Majirin,   E.N. Nagdaev,   I.V. Verner,  

 

期刊: Radiation Effects and Defects in Solids  （Taylor Available online 1989）
卷期: Volume 111-112, issue 1-2  

页码: 467-469

 

ISSN:1042-0150

 

年代: 1989

 

DOI:10.1080/10420158908213021

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

The non-monotonic distribution of secondary defects after two-step annealing of silicon implanted with boron ions is investigated using the TEM technique and the method of mercury probe along a bevel which was made chemically. Possible mechanisms of multilayer structure formation are discussed.

 

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