首页   按字顺浏览 期刊浏览 卷期浏览 Fast silicon etching using an expanding cascade arc plasma in a SF6/argon mixture
Fast silicon etching using an expanding cascade arc plasma in a SF6/argon mixture

 

作者: J. J. Beulens,   A. T. M. Wilbers,   M. Haverlag,   G. S. Oehrlein,   G. M. W. Kroesen,   D. C. Schram,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1992）
卷期: Volume 10, issue 6  

页码: 2387-2392

 

ISSN:1071-1023

 

年代: 1992

 

DOI:10.1116/1.586072

 

出版商: American Vacuum Society

 

关键词: ETCHING;SILICON;ELECTRIC ARCS;PLASMA JETS;SULFUR FLUORIDES;Si

 

数据来源: AIP

 

摘要:

An expanding cascaded arc is used as a fluorine atom source for fast etching of silicon. Extremely high etch rates up to 1.3 μm/s have been obtained. A reactor parameter study has been performed. The obtained selectivity Si/SiO2is ∼11 for substrate temperatures of 600 °C, increasing to ∼20 at 100 °C. The etching proces is fully isotropic.

 

点击下载:  PDF (754KB)



返 回