Measurements of the energy distribution of electrons emitted in vacuum by very shallow siliconp‐njunctions are described. It has been found that diodes with the junction perpendicular to the surface show a relatively narrow peak and a broad band, while diodes with the junction parallel to the surface only give a narrow peak (half‐width 0.50 eV). The broad band is ascribed to electrons emitted from the depletion layer of the junction, and the narrow peak is attributed to electrons emitted from the neutralnlayer.