首页   按字顺浏览 期刊浏览 卷期浏览 Infrared response of lightly doped Schottky diodes
Infrared response of lightly doped Schottky diodes

 

作者: Keith S. Champlin,   Gadi Eisenstein,  

 

期刊: Applied Physics Letters  （AIP Available online 1977）
卷期: Volume 31, issue 3  

页码: 221-223

 

ISSN:0003-6951

 

年代: 1977

 

DOI:10.1063/1.89614

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The traditional hf model of a Schottky diode has been extended to include skin effect, carrier inertia, and displacement current. Above the plasma frequency, results differ considerably from those of the traditional model. The extended model helps understand recently reported detection of 10.6‐&mgr; radiation with Ge diodes doped to only 1016 cm−3.

 

点击下载:  PDF (228KB)



返 回