The task of successfully dealing with the proximity effect problem involves many aspects, all of which must be dealt with in a reasonably satisfactory manner. If one chooses to correct for the proximity effect by doing dose compensation, one major task is the solution of the integral equation which describes the resultant exposure in terms of the incident flux of electrons. One well known method is the self‐consistent method. This paper describes a method which provides a relatively accurate approximate solution to the integral equation which is easy to calculate and which provides information on where features should be fractured to obtain good dose compensation. Although the relationship between the incident flux and the resultant exposure is linear, the development process itself is not. This means that the usual integral equation should be modified slightly so that the resultant exposure is defined in a manner which more closely matches the real problem. This paper will attempt to describe how information from the development process can be used to define the exposure problem in a manner which provides more desirable solutions.