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Defects in ion implanted and laser irradiated GaAs

 

作者: Werner Wesch,   Konrad Gärtner,   Elke Wendler,   Gerhard Götz,  

 

期刊: Radiation Effects  （Taylor Available online 1986）
卷期: Volume 97, issue 3-4  

页码: 313-319

 

ISSN:0033-7579

 

年代: 1986

 

DOI:10.1080/00337578608226022

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

For special implantation conditions (light ions, sufficiently high implantation temperatures in the case of heavier ion masses) defects are created in GaAs, the back-scattering minimum yield of which does not show a pronounced direct backscattering part.

 

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