The Monte Carlo method is selected to study the spatial distributions of the displaced atoms and to calculate the energy deposition profile in the irradiated matter. Furthermore, precise values of the range of the ions in the medium and its dependence on ion's energy are obtained. These ion range calculations are important in the doping process of semiconductors in which impurity atoms should penetrate to a prescribed depth. Three materials Fe, Ni and Cu are chosen as target materials. Atoms of the same kind as the target material and helium ions are chosen as projectiles. The parameters that affect the studied functions are systematically studied.