Observation of room-temperature laser emission from type III InAs/GaSb multiple quantum well structures
作者:
A. N. Baranov,
N. Bertru,
Y. Cuminal,
G. Boissier,
C. Alibert,
A. Joullie´,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 6
页码: 735-737
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119629
出版商: AIP
数据来源: AIP
摘要:
Multiple quantum well InAs/GaSb laser heterostructures with type III (type II broken gap) band alignment in the active region have been grown by molecular beam epitaxy. Intense electroluminescence was observed at room temperature (RT) with peak emission wavelengths in the range 1.95–3.4 &mgr;m. RT lasing has been achieved at 1.98 and 2.32 &mgr;m for the structures with 6 and 12 Å thick InAs quantum wells, respectively. ©1997 American Institute of Physics.
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