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Photoconductivity nonlinearity at high excitation power in quantum well infrared photodetectors

 

作者: M. Ershov,   H. C. Liu,   M. Buchanan,   Z. R. Wasilewski,   V. Ryzhii,  

 

期刊: Applied Physics Letters  (AIP Available online 1997)
卷期: Volume 70, issue 4  

页码: 414-416

 

ISSN:0003-6951

 

年代: 1997

 

DOI:10.1063/1.118320

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Nonlinear photoconductivity effects at high excitation power in quantum well infrared photodetectors (QWIPs) are studied both experimentally and theoretically. The photoconductivity nonlinearity is mainly caused by a redistribution of the electric potential at high power, which leads to a decrease of electric field in the bulk of the QWIP. As a result of the decreased field, the photoexcited electron escape probability and drift velocity decrease resulting in a decrease of responsivity. ©1997 American Institute of Physics.

 

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