Photoconductivity nonlinearity at high excitation power in quantum well infrared photodetectors
作者:
M. Ershov,
H. C. Liu,
M. Buchanan,
Z. R. Wasilewski,
V. Ryzhii,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 4
页码: 414-416
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.118320
出版商: AIP
数据来源: AIP
摘要:
Nonlinear photoconductivity effects at high excitation power in quantum well infrared photodetectors (QWIPs) are studied both experimentally and theoretically. The photoconductivity nonlinearity is mainly caused by a redistribution of the electric potential at high power, which leads to a decrease of electric field in the bulk of the QWIP. As a result of the decreased field, the photoexcited electron escape probability and drift velocity decrease resulting in a decrease of responsivity. ©1997 American Institute of Physics.
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