Electron-beam-induced current (EBIC) profiles ofMo/CuInX2/CdS/ZnOthin film solar cells with X=Se, S were recorded at different temperatures. We measure the collection efficiency of cells as a function of the beam energy and subsequently identify the depth dependent collection function. For aCuInS2based cell, charge collection is maintained by diffusion transport of minority carriers to the junction with an effective diffusion length of 1.3±0.2 &mgr;m. This value is independent on temperature between 123 and 373 K. ACuInSe2based cell exhibits increased collection of charge carriers created at the back contact on decreasing temperature. The temperature variation of the EBIC profiles is discussed considering the effect of bulk and grain boundary recombination. ©1997 American Institute of Physics.