Variations in thermoelectric power and d.c. resistivity in sequentially irradiated and annealed n- and p-type doped α-tin
作者:
J.E. Charles,
R.B. Gardiner,
S. Myhra,
期刊:
Radiation Effects
(Taylor Available online 1975)
卷期:
Volume 25,
issue 3
页码: 145-154
ISSN:0033-7579
年代: 1975
DOI:10.1080/00337577508235382
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
Sequential irradiations and anneals were carried out on n- and p-type : α-tin filaments. Irradiations were performed at 4.5 K for a nominal electron beam energy of 0.90 MeV. A carrier removal rate varying with defect concentration was found. Isochronal anneals were carried out over the temperature range 20 to 47 K. Four first-order stages with activation energy scaling factors of 67, 90, 106 and 122 meV were resolved in order of increasing temperature. A fractional defect recovery scheme was deduced with defect concentration ratios given by IA: IB: IC: ID= 84:4:6:6 for the four stages. An average constant carrier removal rate was used to deduce charge carrier mobilities from both damage and annealing data. It was found that the electron mobilities were inconsistent with those deduced from the theory of ionized impurity scattering. A model is proposed requiring that the majority of the defects result in deep acceptor sites. In addition, shallow defect states positioned somewhat above the γ8* conduction and valence band junction are proposed to account qualitatively for the observed results.
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