Room‐temperature low‐current‐threshold broad‐area Fabry‐Perot AlxGa1−xAs/AlyGa1−yAs double‐heterostructure (DH) lasers have been prepared by molecular‐beam epitaxy (MBE) covering the lasing emission wavelength from 8900 to 7200 A˚ (infrared to visible). In this emission range, the averaged pulsed current threshold densitiesJthare as low as those obtained by liquid‐phase epitaxy (LPE). At ∼8200 A˚, the wavelength at which DH lasers have also been prepared by metalorganic chemical‐vapor deposition (MO‐CVD), theJth’s of the MBE grown lasers are lower.