The electrical properties of the photochemical vapor‐deposited silicon nitride/silicon interface are presented as a function of deposition temperature (70 to 200 °C). High values of interface state densityNss(about 3×1012cm−2eV−1), an equivalent charge at the interfaceQss(about 5×1011cm−2), and an important injection‐type hysteresis of the capacitance voltageC‐Vcurves are observed in the as‐grown material. Most defects are found to be generated during the deposition process by the ultraviolet illumination used to activate the chemical reaction of the gases. Low‐temperature (250 °C) and short‐time (30 min) annealings eliminate part of the defects, resulting in lower values ofNss(about 1×1012cm−2eV−1),Qss(about 5×1010cm−2), and reduced injection‐type hysteresis.