Influence of magnetic field on 1/fnoise in GaAs resistors without surface effects
作者:
M. H. Song,
A. N. Birbas,
A. van der Ziel,
A. D. van Rheenen,
期刊:
Journal of Applied Physics
(AIP Available online 1988)
卷期:
Volume 64,
issue 2
页码: 727-728
ISSN:0021-8979
年代: 1988
DOI:10.1063/1.341940
出版商: AIP
数据来源: AIP
摘要:
The influence on magnetic field on 1/fnoise in a planar GaAs resistor grown by molecular‐beam epitaxy and without surface effects was investigated experimentally. The experimental results can be explained by the number fluctuation model but not by the mobility fluctuation model. Previously, experimental results indicating number fluctuation type of 1/fnoise were mostly attributed to the surface effects associated with the particular structures used for the experiments. In our device the surface effects were diminished so that the fluctuations of the bulk current could be considered to produce the 1/fnoise.
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