Laser‐induced sputtering of Ga0and Ga+from the GaP (110) surface: Its relation to surface imperfection
作者:
Yasuo Nakai,
Ken Hattori,
Noriaki Itoh,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 56,
issue 20
页码: 1980-1982
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.102995
出版商: AIP
数据来源: AIP
摘要:
We have measured emission of Ga+ions and neutral Ga0atoms induced by irradiation of the GaP (110) surface with laser pulses of subband‐gap energies. It is found that the Ga+yield of partially annealed Ar+ion bombarded surfaces is reduced by thermal annealing and also by repeated irradiation with laser pulses, while the Ga0yield is not influenced to an important extent by these treatments. The Ga+emission, which occurs at a lower fluence than Ga0emission, is ascribed to emission from defect sites at surfaces. We suggest that measurements of laser‐induced particle emission for subband‐gap energies will be useful for detection and elimination of low‐density defects on surfaces.
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