Defect levels produced inp-type silicon by 30 MeV ion implantation and their isochronal annealing behavior were studied by DLTS. Three hole traps located atEv+ 0.18 eV,Ev+ 0.28 eV andEv+ 0.33 eV were introduced at the track end of ions. From comparison with other published data we attribute these levels to single positively charged divacancy (Ev+ 0.18 eV), to Si-B3 (⟨100⟩ split-interstitialEv+ 0.28 eV), and to Si-A14 (divacancy-oxygen complexEv+ 0.33 eV). It was found that the introduction rate of observed defects shows a peak at the fluence of 5 × 1013implanted ions and then decreases at higher fluence.