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Two‐Terminal Asymmetrical and Symmetrical Silicon Negative Resistance Switches

 

作者: R. W. Aldrich,   N. Holonyak,  

 

期刊: Journal of Applied Physics  （AIP Available online 1959）
卷期: Volume 30, issue 11  

页码: 1819-1824

 

ISSN:0021-8979

 

年代: 1959

 

DOI:10.1063/1.1735062

 

出版商: AIP

 

数据来源: AIP

 

摘要:

By making use of an emitter region shorted by a metallic contact to an adjacent base region, a new form ofp‐n‐p‐nswitch is obtained. Several new structures are described, including a symmetrical (or ac) switch. Typical experimental results on switches which breakdown in the range from 25 to 40 v are presented.

 

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