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Theoretical analysis of the resistively coupled single-electron transistor

 

作者: Alexander N. Korotkov,  

 

期刊: Applied Physics Letters  (AIP Available online 1998)
卷期: Volume 72, issue 24  

页码: 3226-3228

 

ISSN:0003-6951

 

年代: 1998

 

DOI:10.1063/1.121557

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The operation of the resistively coupled single-electron transistor (R-SET) is studied quantitatively. Due to the Nyquist noise of the coupling resistance, degradation of the R-SET performance is considerable at temperaturesTas small as10−3e2/C(whereCis the junction capacitance) while the voltage gain becomes impossible atT≳10−2e2/C.©1998 American Institute of Physics.

 

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