Theoretical analysis of the resistively coupled single-electron transistor
作者:
Alexander N. Korotkov,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 72,
issue 24
页码: 3226-3228
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.121557
出版商: AIP
数据来源: AIP
摘要:
The operation of the resistively coupled single-electron transistor (R-SET) is studied quantitatively. Due to the Nyquist noise of the coupling resistance, degradation of the R-SET performance is considerable at temperaturesTas small as10−3e2/C(whereCis the junction capacitance) while the voltage gain becomes impossible atT≳10−2e2/C.©1998 American Institute of Physics.
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