A tuning range of 200 nm has been achieved with a step‐graded multiquantum well InGaAs/InP laser in an external‐cavity configuration. Continuous, single‐mode lasing could be observed from 1440 to 1640 nm. Depending on the current density, the laser can operate both at then=1 andn=2 quantized states. At low current density, then=1 state gives higher gain, whereas for higher carrier densities, then=2 level dominates. This gives rise to a flat gain profile and an extended operating range, in fact, the widest tuning range reported so far for semiconductor lasers.