Rutherford scattering analysis: a tool for semiconductor-device technology
作者:
D.V.Morgan,
期刊:
IEE Journal on Solid-State and Electron Devices
(IET Available online 1977)
卷期:
Volume 1,
issue 2
页码: 37-45
年代: 1977
DOI:10.1049/ij-ssed.1977.0001
出版商: IEE
数据来源: IET
摘要:
In the paper we consider how the Rutherford scattering of high-energy (MeV) light ions can be used as a nondestructive technique for studying thin films on semiconductor surfaces. A number of examples are discussed which illustrate the potential and limitations of the technique for studying semiconductordevice structures.
点击下载:
PDF
(1115KB)
返 回