Reliability of nitrided Si–SiO2interfaces formed by a new, low‐temperature, remote‐plasma process
作者:
David R. Lee,
Christopher G. Parker,
John Hauser,
Gerald Lucovsky,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1995)
卷期:
Volume 13,
issue 4
页码: 1788-1793
ISSN:1071-1023
年代: 1995
DOI:10.1116/1.587813
出版商: American Vacuum Society
关键词: SILICON;SILICON OXIDES;NITROGEN ADDITIONS;INTERFACE STRUCTURE;PLASMA SOURCES;MOSFET;ELECTRICAL PROPERTIES;Si;SiO2
数据来源: AIP
摘要:
Controlled amounts of nitrogen atoms have been incorporated at Si–SiO2interfaces by a new, low‐temperature (300 °C), remote‐plasma process, and corresponding improvements in device reliability are reported. Interfacial nitrogen‐atom concentrations, up to 1×1015cm−2, were obtained by a predeposition, remote plasma‐assisted oxidation using mixtures of N2O and O2. Auger electron spectroscopy and secondary ion mass spectrometry studies to analyze N‐atom concentrations at Si–SiO2interfaces are discussed. Also, the results of electrical testing of submicron,n‐channel metal–oxide–silicon field‐effect transistors fabricated with this new process technology are reported. We found that the incorporation of N atoms at the Si–SiO2interface increased current drive capability at high gate voltages but did not affect the threshold voltage of devices or the peak channel transconductance,gm. Device reliability, as measured by resistance to peakgmdegradation after hot‐carrier stressing, was found to increase with increasing N‐atom concentrations at the Si–SiO2interface.
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