Neutral‐donor‐bound exciton recombination dynamics in GaN grown by metalorganic chemical vapor deposition
作者:
G. D. Chen,
M. Smith,
J. Y. Lin,
H. X. Jiang,
M. Asif Khan,
C. J. Sun,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 67,
issue 12
页码: 1653-1655
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.115046
出版商: AIP
数据来源: AIP
摘要:
Neutral‐donor‐bound exciton recombination (I2) dynamics have been studied by photoluminescence in an unintentionally dopedn‐type GaN epitaxial layer grown by metalorganic chemical vapor deposition. The luminescence emission line shape, peak position, and intensity as functions of temperature have been measured. In particular, time‐resolved emission spectroscopy has been employed to study the dynamic processes of the bound exciton recombination, from which the temperature and the emission energy dependencies of the recombination lifetime of this transition have been obtained. ©1995 American Institute of Physics.
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