Faulted dipoles in GaAs have been directly imaged by high‐resolution transmission electron microscopy. The dislocation dipoles were introduced into the GaAs by deforming a sample in compression along a ⟨110⟩ axis. Both theZcharacter of the dipole and the intrinsic nature of the stacking faults could be determined directly from the high‐resolution images. Using convergent‐beam electron diffraction, it has been shown that it is possible to determine the polarity of the sample and thereby to differentiate between the &agr; and &bgr; partial dislocations.