Shallow junctions by high‐dose As implants in Si: experiments and modeling
作者:
M. Y. Tsai,
F. F. Morehead,
J. E. E. Baglin,
A. E. Michel,
期刊:
Journal of Applied Physics
(AIP Available online 1980)
卷期:
Volume 51,
issue 6
页码: 3230-3235
ISSN:0021-8979
年代: 1980
DOI:10.1063/1.328078
出版商: AIP
数据来源: AIP
摘要:
Shallow (<0.2 &mgr;m)n+layers in Si with high conductivity (<40 &OHgr;/&laplac;) have been formed by high‐dose (2×1016cm−2) As implants. Experimental observations of As distributions and carrier concentrations are successfully simulated by a computer program which accounts for both the concentration dependent diffusion and As clustering effects. Reduction of electrical carriers in high‐dose As implanted Si during moderate temperature (∼800 ° C) heat treatments is readily explained by the kinetics of As clustering. Physical limitations on the conductivity which can be achieved by thermally annealed As implants in Si are also discussed.
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