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Specific contact resistance for alloyed Au‐Zn contacts onp‐type GaxIn1−xPyAs1−y

 

作者: H. C. Casey,   R. A. Logan,   P. W. Foy,   W. M. Augustyniak,   J. M. Vandenberg,  

 

期刊: Journal of Applied Physics  （AIP Available online 1980）
卷期: Volume 51, issue 5  

页码: 2933-2934

 

ISSN:0021-8979

 

年代: 1980

 

DOI:10.1063/1.327966

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The specific contact resistance for a pulse plated and alloyed Au‐Zn (16 at. % Zn) contact onp‐type Ga0.28In0.72P0.39As0.61was found to be 3.60.4×10−5&OHgr; cm2. Results of Rutherford backscattering measurements with 1.8‐MeV4He+showed that the alloyed Au moved only ∼1500 A˚ into the quaternary layer, while In and GaAs were displaced to the surface.

 

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