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Field effect transistor tracking surface field sensor

 

作者: Mark N. Horenstein,  

 

期刊: Review of Scientific Instruments  (AIP Available online 1984)
卷期: Volume 55, issue 2  

页码: 222-225

 

ISSN:0034-6748

 

年代: 1984

 

DOI:10.1063/1.1137728

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A closed‐loop tracking circuit incorporating high‐impedance metal–oxide–semiconductor (MOSFET) transistors has been developed for measuring high‐voltage electrostatic fields on the surfaces of conducting electrodes. One MOSFET is used as a field sensor, and the other as a tracking ‘‘dummy.’’ The feedback circuit yields a signal voltage output that is at the same time linearly dependent on the external surface field being measured, and virtually independent of the gain and the offset parameters of the specific MOSFET device used as a sensor.

 

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