We have studied the contact resistance in a metallization system that employs a direct contact between a tungsten–titanium alloy and shallow junctions in silicon. The values obtained in the present study are all within acceptable limits (<100 &OHgr; &mgr;m2) for very large scale integration applications. The metal–silicon system has been subjected to moderate heat treatments, similar to those required in processing two‐level metallization schemes. No detrimental effects on the electrical properties of these contacts have been observed.