We discuss a new low‐pressure and low‐temperature process for the chemical vapor deposition (CVD) of silicon dioxide. The process differs from conventional low‐pressure CVD in that lower temperatures (150–300 °C) and a unique pressure window (2–10 Torr) provide the conditions for the reaction of silane (SiH4) and oxygen. In this thermal process, activation energies of 0.15–0.18 eV and deposition rates of 100 A˚/min at 250 °C are achieved. This technique is approximately 15 times less sensitive to the O2:SiH4ratio than atmospheric pressure CVD. The deposition conditions are compatible with both low‐temperature silicon and III‐V technologies. Preliminary current‐voltage and capacitance‐voltage measurements on Si indicate dielectric field strength of 3–8×106V/cm and fixed oxide charge density (Qss) less than 1011cm−2.