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Ion implantation for semiconductor processing

 

作者: Amitabh Jain,  

 

期刊: Radiation Effects  （Taylor Available online 1982）
卷期: Volume 63, issue 1-4  

页码: 39-46

 

ISSN:0033-7579

 

年代: 1982

 

DOI:10.1080/00337578208222823

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

The potential advantages of ion implantation have been exploited in virtually every kind of semiconductor device. Several commercially important devices owe their existence to this technique.

 

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