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Effect of hydrogen implantation on shallow and deep levels in GaAs growth by molecular‐beam epitaxy

 

作者: A. Bosacchi,   S. Franchi,   E. Gombia,   R. Mosca,   L. Vanzetti,   P. Allegri,   V. Avanzini,   M. Capizzi,   C. Coluzza,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1989）
卷期: Volume 7, issue 5  

页码: 1103-1105

 

ISSN:0734-211X

 

年代: 1989

 

DOI:10.1116/1.584558

 

出版商: American Vacuum Society

 

关键词: ION IMPLANTATION;HYDROGENATION;MOLECULAR BEAM EPITAXY;GALLIUM ARSENIDES;GaAs

 

数据来源: AIP

 

摘要:

GaAs layers grown by molecular‐beam epitaxy (MBE) have been postgrowth hydrogenated by implanting low‐energy hydrogen ions with a Kaufman source. Changes in the concentration of deep and shallow levels have been studied by DLTS andC–Vmeasurements, respectively, for different hydrogen doses. A close match is obtained between the present results and those obtained for GaAs grown by the same MBE machine in hydrogen backpressure. Therefore, it is concluded that MBE growth with hydrogen results in hydrogen incorporation in the layers, and hence, in the passivation of shallow and deep levels.

 

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