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Critical implantation temperature and annealing of indium phosphide

 

作者: W. Rothemund,   C. R. Fritzsche,  

 

期刊: Journal of Vacuum Science and Technology  （AIP Available online 1979）
卷期: Volume 16, issue 3  

页码: 968-969

 

ISSN:0022-5355

 

年代: 1979

 

DOI:10.1116/1.570126

 

出版商: American Vacuum Society

 

关键词: ION IMPLANTATION;INDIUM PHOSPHIDES;HEAT TREATMENTS;CRITICAL TEMPERATURE;AMORPHOUS STATE;ANNEALING;ARGON;HIGH TEMPERATURE;RADIATION EFFECTS

 

数据来源: AIP

 

摘要:

This communication adds further data to the discussion of implantation temperatures for III–V compounds recently published by Gamoetal. Amorphization of InP by ion implantation can be avoided by heating the target to 150° C. Postimplantation annealing of amorphous layers can be done within 30 min at 500° C under phosphorus pressure but noticeable residual damage is left.

 

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