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The sulfurized InP surface

 

作者: C. W. Wilmsen,   K. M. Geib,   J. Shin,   R. Iyer,   D. L. Lile,   John J. Pouch,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1989）
卷期: Volume 7, issue 4  

页码: 851-853

 

ISSN:0734-211X

 

年代: 1989

 

DOI:10.1116/1.584613

 

出版商: American Vacuum Society

 

关键词: INDIUM PHOSPHIDES;SURFACE TREATMENTS;SULFIDATION;ELECTRONIC STRUCTURE;AUGER ELECTRON SPECTROSCOPY;PHOTOELECTRON SPECTROSCOPY;CHEMICAL BONDS;InP

 

数据来源: AIP

 

摘要:

Sulfur treatments have previously been shown to improve the electrical characteristics of InP and GaAs devices. This paper reports the results of an Auger/x‐ray photoelectron spectroscopy investigation of the InP surface after sulfur treatment. It is shown that the sulfur remains on the surface bonded to indium. There is no indication of elemental sulfur or sulfur bonded to phosphorus. This suggests that the sulfur has replaced phosphorus on the surface and has filled the phosphorus vacancies.

 

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