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Model of coherent transport in metal–insulator–midband gap semiconductor–insulator–semiconductor structure

 

作者: I. I. Abramov,   A. L. Danilyuk,  

 

期刊: Applied Physics Letters  (AIP Available online 1997)
卷期: Volume 71, issue 5  

页码: 665-667

 

ISSN:0003-6951

 

年代: 1997

 

DOI:10.1063/1.119823

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A kinetic model of coherent transport with self-organized carrier transfer via midband gap semiconductor states in metal–insulator–midband gap semiconductor–insulator–semiconductor structure at room temperature is proposed. The coherent transport at room temperature can be a result of continuous oscillations of charge carriers at midband gap semiconductor states. ©1997 American Institute of Physics.

 

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