Model of coherent transport in metal–insulator–midband gap semiconductor–insulator–semiconductor structure
作者:
I. I. Abramov,
A. L. Danilyuk,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 5
页码: 665-667
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119823
出版商: AIP
数据来源: AIP
摘要:
A kinetic model of coherent transport with self-organized carrier transfer via midband gap semiconductor states in metal–insulator–midband gap semiconductor–insulator–semiconductor structure at room temperature is proposed. The coherent transport at room temperature can be a result of continuous oscillations of charge carriers at midband gap semiconductor states. ©1997 American Institute of Physics.
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