Conductance measurements have been performed onp‐Si/SiO2metal‐oxide‐semiconductor capacitors fabricated by thermal oxidation of the silicon in three different reactors under different conditions in three different commercial systems. In only one case (system 3) did we find the very broad conductance curves usually associated withp‐Si/SiO2junctions, the others from systems 1 and 2 exhibiting normal interface state response. However, in the sample from system 2, the response of bulk states inside the depletion region was found to distort theGp/&ohgr; spectra, while the sample from system 1 showed no such response until annealing in H2/Ar gas at 500 °C reduced the interface state density to such a level that the bulk state responses were visible. We argue that the presence of bulk states probably explains the very broadGp/&ohgr; curves observed by us, and further propose that some such mechanism accounts for the historical difficulties encountered with the conductance technique onp‐Si/SiO2capacitors.