Electron tunneling into amorphous germanium films was studied using Al&sngbnd;Al2O3&sngbnd;Ge tunnel junctions. A ``conductance well'' was observed, which is related to the band edges of the amorphous germanium film and its surface potential. Structure in the conductance well is interpreted as tunneling into gap states. The results suggest tunneling as a possible tool for the study of band structure in amorphous materials.