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Structural evolution of the low energy deuterium-implanted silicon

 

作者: M.V. Sidorov,   S.R. Oktyabrsky,   M.A. Lomidze,   A.E. Gorodetsky,  

 

期刊: Radiation Effects and Defects in Solids  （Taylor Available online 1992）
卷期: Volume 124, issue 2  

页码: 223-232

 

ISSN:1042-0150

 

年代: 1992

 

DOI:10.1080/10420159208220194

 

出版商: Taylor & Francis Group

 

关键词: implantation;silicon;deuterium;XTEM;amorphization;voids

 

数据来源: Taylor

 

摘要:

Structural changes of (111)Si after 10keV D+2ion implantation with fluence in the range of 1016– 1019cm−2at room temperature have been studied with cross-sectional transmission electron microscopy (XTEM), secondary ion mass spectroscopy (SIMS) and neutral molecules mass spectroscopy (NMMS).

 

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