Results of transport measurements on a GaAs quantum dot are presented in which the gate geometry allows the dot to be accessed by three, rather than two, contacts. In the Coulomb blockade regime, conductance oscillations periodic in gate voltage are measured concurrently at two contacts in response to a small excitation voltage at the third contact. When the dot is in the strongly blockaded regime, we obtain the expected result from single electron tunneling theory that oscillations at the two output contacts are correlated with each other in gate voltage. As the tunnel barriers are made softer by changing the gate voltage, a strikingly different phenomenon is observed: conductance peaks at the two output leads evolve from perfect correlation to perfect anticorrelation with each other. ©1995 American Institute of Physics.