Characterization of localized atomic surface defects by tunneling microscopy and spectroscopy
作者:
R. J. Hamers,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena
(AIP Available online 1988)
卷期:
Volume 6,
issue 4
页码: 1462-1467
ISSN:0734-211X
年代: 1988
DOI:10.1116/1.584241
出版商: American Vacuum Society
关键词: SCANNING ELECTRON MICROSCOPY;CRYSTAL DEFECTS;SURFACE STATES;IMPURITY STATES;SURFACE STRUCTURE;ALUMINIUM;SILICON;INTERFACE STRUCTURE;INTERFACE STATES;ADSORPTION;Si;DEFECT STATES;SCANNING TUNNELING MICROSCOPY
数据来源: AIP
摘要:
Tunneling microscopy and spectroscopy are used to characterize defects in Al overlayers on Si(111). At low coverages where Al and Si adatoms are both present, voltage‐dependent scanning tunneling microscopy imaging allows them to be selectively imaged due to their different electronic structures. In (3)1/2‐Al, Si adatoms substituting for Al give rise to a defect state at −0.4 eV which is strongly localized in space. Band‐bending measurements indicate that the Si substitutional defects are electrically neutral. The results are interpreted in terms of a Mott–Hubbard model for a strongly correlated system.
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